Breakthrough made on the synthesis of three layer CdSe/CdTe/ZnTe system
(Aug 31, 2005)
¡¡Due to the cascade type of energy levels for both valence and conduction bands, the electron and hole are located essentially on the CdSe and ZnTe, respectively. Hence, they are separated by the CdTe layer, resulting in an extraordinarily long radiative lifetime. As for perspectives, this system can be exploited in photovoltaic devices as well as in the catalytic reaction.
Subpicosecond Kerr gating system under construction (Aug 31, 2005)
¡¡We are currently setting up a subpicosecond Kerr gating system. This, in combination with a charge coupled detector, allows a spectral (even spatial) temporal evolution with the whole range (400-700 nm). In comparison to the upconverting technique, a much better signal-to-noise ratio as well as stability by using the Kerr gating method can be expected, although certain temporal resolution may be lost. Our goal is to resolve the spectral temporal evolution due to the vibrational cooling effect.
Ru(II) based OLED under investigation (Aug 31, 2005)
¡¡Through rational design of Ru(II) complexes, we would be able to achieve Ru(II) based OLED with decent external quantum efficiencies. Theoretical approaches also confirm the feasibility of achieving color tuning from green-NIR based on ingenious design of ancillary and bidentate ligands. We believe this progress may cast a quake on the OLED society. This work cannot be fulfilled without the collaboration with Prof. Chi¡¯s group in National Tsing Hua University.
 
 
     Aug/31/2005
1.Breakthrough made on the synthesis of three layer CdSe/CdTe/ZnTe system
     Aug/31/2005
2.Subpicosecond Kerr gating system under construction
     Aug/31/2005
3.Ru(II) based OLED under investigation